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Mitsubishi Electric CM1400DU-24NF Dual IGBT Half-Bridge Power Module for High-Power Switching
- Regular price
- $699.00
- Sale price
- $699.00
- Regular price
-
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Product Description P/N: CM1400DU-24NF
Description
The Mitsubishi Electric CM1400DU-24NF is a dual IGBT power semiconductor module for high-power switching circuits. Its half-bridge configuration and 1200 V, 1400 A ratings support integration into compatible inverter and motor-drive power stages.
Technical Specifications
| Condition | New/Never Used Surplus |
| Brand | Mitsubishi Electric |
| Category | Power Semiconductors |
| Part Number | CM1400DU-24NF |
| Subcategory | IGBT Power Modules |
| Series | NF series / Mega Power Dual |
| Configuration | Dual IGBT, half bridge |
| Integrated Diodes | Freewheel diodes |
| Collector-Emitter Voltage Rating | 1200 V |
| Collector Current Rating | 1400 A at case temperature 25°C |
| Peak Collector Current | 2800 A; subject to pulse limits |
| Maximum Gate-Emitter Voltage | ±20 V |
| Maximum Collector Dissipation | 3900 W under specified thermal conditions |
| Collector-Emitter Saturation Voltage | Maximum 2.5 V at VGE = 15 V and IC = 1400 A, under specified test conditions |
| Input Capacitance | Typical 220 nF at VCE = 10 V |
| Junction Temperature Range | −40°C to +150°C |
| Storage Temperature Range | −40°C to +125°C |
| Isolation Voltage | 2500 Vrms, main terminals to baseplate, AC for 1 minute |
| Mounting | Heat-sink / chassis mounting |
| Weight | 1.4 kg (3.09 lb) |
Information About CM1400DU-24NF
The CM1400DU-24NF is a Mega Power Dual device from the Mitsubishi Electric NF-series IGBT family. It combines two insulated-gate bipolar transistors with associated freewheel diodes in one module. An electrically isolated baseplate provides the mounting interface for a suitable heat sink. The device requires external gate-drive circuitry and thermal management appropriate to the application.
Key Features:
- Dual IGBT Configuration: Integrates two switching devices in a half-bridge arrangement.
- Voltage Capability: Provides a collector-emitter voltage rating of 1200 V.
- Collector Current Rating: Supports 1400 A at a specified case temperature of 25°C.
- Pulsed Current Capability: Provides a peak collector-current rating of 2800 A under specified pulse conditions.
- Freewheel Diodes: Includes diode paths for inductive-load current commutation.
- Isolated Baseplate: Provides electrical isolation between the main terminals and mounting base.
- Screw-Terminal Construction: Uses bolted power connections for installation in a matched power assembly.
The CM1400DU-24NF delivers the reliability and precision required for controlled high-power switching in compatible inverter systems.
Description
The Mitsubishi Electric CM1400DU-24NF is a dual IGBT power semiconductor module for high-power switching circuits. Its half-bridge configuration and 1200 V, 1400 A ratings support integration into compatible inverter and motor-drive power stages.
Technical Specifications
| Condition | New/Never Used Surplus |
| Brand | Mitsubishi Electric |
| Category | Power Semiconductors |
| Part Number | CM1400DU-24NF |
| Subcategory | IGBT Power Modules |
| Series | NF series / Mega Power Dual |
| Configuration | Dual IGBT, half bridge |
| Integrated Diodes | Freewheel diodes |
| Collector-Emitter Voltage Rating | 1200 V |
| Collector Current Rating | 1400 A at case temperature 25°C |
| Peak Collector Current | 2800 A; subject to pulse limits |
| Maximum Gate-Emitter Voltage | ±20 V |
| Maximum Collector Dissipation | 3900 W under specified thermal conditions |
| Collector-Emitter Saturation Voltage | Maximum 2.5 V at VGE = 15 V and IC = 1400 A, under specified test conditions |
| Input Capacitance | Typical 220 nF at VCE = 10 V |
| Junction Temperature Range | −40°C to +150°C |
| Storage Temperature Range | −40°C to +125°C |
| Isolation Voltage | 2500 Vrms, main terminals to baseplate, AC for 1 minute |
| Mounting | Heat-sink / chassis mounting |
| Weight | 1.4 kg (3.09 lb) |
Information About CM1400DU-24NF
The CM1400DU-24NF is a Mega Power Dual device from the Mitsubishi Electric NF-series IGBT family. It combines two insulated-gate bipolar transistors with associated freewheel diodes in one module. An electrically isolated baseplate provides the mounting interface for a suitable heat sink. The device requires external gate-drive circuitry and thermal management appropriate to the application.
Key Features:
- Dual IGBT Configuration: Integrates two switching devices in a half-bridge arrangement.
- Voltage Capability: Provides a collector-emitter voltage rating of 1200 V.
- Collector Current Rating: Supports 1400 A at a specified case temperature of 25°C.
- Pulsed Current Capability: Provides a peak collector-current rating of 2800 A under specified pulse conditions.
- Freewheel Diodes: Includes diode paths for inductive-load current commutation.
- Isolated Baseplate: Provides electrical isolation between the main terminals and mounting base.
- Screw-Terminal Construction: Uses bolted power connections for installation in a matched power assembly.
The CM1400DU-24NF delivers the reliability and precision required for controlled high-power switching in compatible inverter systems.
